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* * * * * *
* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (1) Proper strike and creepage distance must be provided.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
Isolated Package Applications
High Voltage Power Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Lead Temperature for Soldering Purpose
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TA = 25_C Derate above 25_C
Total Power Dissipation* @ TC = 25_C Derate above 25_C
Base Current
Collector Current -- Continuous Peak
RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C)
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Electrically Similar to the Popular TIP47 250 VCEO(sus) 1 A Rated Collector Current No Isolating Washers Required Reduced System Cost UL Recognized, File #E69369, to 3500 VRMS Isolation
Characteristic
Rating
Test No. 1 Per Fig. 10 Test No. 2 Per Fig. 11 Test No. 3 Per Fig. 12
Symbol
Symbol
TJ, Tstg
VISOL
VCEO
RJC
RJA
VCB
VEB
PD
PD
TL
IC
IB
NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS
- 65 to + 150
MJF47
CASE 221D-02 TO-220 TYPE
Value
2 0.016
Order this document by MJF47/D
4500 3500 1500
62.5
Max
28 0.23
260
350
250
4.4
0.6
1 2
5
VRMS
Watts W/_C
Watts W/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
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MJF47
(1) Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 0.2 Adc, VCE 10 Vdc, f = 2 MHz)
Base-Emitter On Voltage (IC = 1 Adc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc)
DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1 Adc, VCE = 10 Vdc)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 350 Vdc, VBE = 0)
Collector Cutoff Current (VCE = 150 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0)
2
V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 100 200 10 20 60 40 6 4 2 0.02 TJ = 150C - 55C 0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS) 25C
Figure 1. DC Current Gain
v 300 s, Duty Cycle v 2%.
Characteristic
TYPICAL CHARACTERISTICS
VCE = 10 V
1
2
0.2
0.4
0.8
1.2
0.6
1.4
1
0 0.02
Motorola Bipolar Power Transistor Device Data
0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS) VCEO(sus) VCE(sat) VBE(on) VBE(sat) @ IC/IB = 5 Symbol ICEO IEBO ICES hFE VCE(sat) @ IC/IB = 5 V fT VBE(on) @ VCE = 4 V TJ = 25C Min 250 10 30 10 -- -- -- -- -- Max 150 -- 1.5 0.1 0.2 -- -- 1 1
Figure 2. "On" Voltages
1 mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc -- 2
MJF47
1 0.5 tr TJ = 25C VCC = 200 V IC/IB = 5 td t, TIME ( s) 5 ts 2 1 0.5 tf TJ = 25C VCC = 200 V IC/IB = 5
t, TIME ( s)
0.2 0.1 0.05
0.2 0.1 0.05 0.02
0.02 0.01 0.02
0.05
0.2 0.5 0.1 IC, COLLECTOR CURRENT (AMPS)
1
2
0.05
0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS)
1
2
Figure 3. Turn-On Time
Figure 4. Turn-Off Time
TURN-ON PULSE APPROX +11 V Vin 0 VEB(off) APPROX +11 V Vin t2 TURN-OFF PULSE
VCC RC Vin SCOPE RB Cjd << Ceb t1 7 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2% APPROX - 9 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. -4 V
t1 t3
51
Figure 5. Switching Time Equivalent Circuit
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.1 SINGLE PULSE RJC(t) = r(t) RJC RJC = 4.4C/W MAX TJ(pk) - TC = P(pk) RJC(t)
0.2 0.3
0.5
1
2
3
5
10
20 30 50 t, TIME (msec)
100
200 300
500
1K
2K
3K
5K
10 K
Figure 6. Thermal Response
Motorola Bipolar Power Transistor Device Data
3
MJF47
IC, COLLECTOR CURRENT (AMPS) 3 2 500 s 1 0.5 0.3 0.2 0.1 0.05 0.03 10 CURRENT LIMIT THERMAL LIMIT @ TC = 25C SECONDARY BREAKDOWN LIMIT 100 20 30 50 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 1 ms dc 100 s
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. T J(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
v
Figure 7. Maximum Forward Bias Safe Operating Area
PD(AV), AVERAGE POWER DISSIPATION (WATTS) 40 PD(AV), AVERAGE POWER DISSIPATION (WATTS) 2
30
1.5
20
1
10
0.5
0
0
50
100
150
200
0
0
50
100
150
200
TC, CASE TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
Figure 8. Power Derating
Figure 9. Power Derating
4
Motorola Bipolar Power Transistor Device Data
MJF47
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE
CLIP
CLIP
0.107" MIN LEADS
0.107" MIN LEADS
HEATSINK 0.110" MIN
HEATSINK
HEATSINK
Figure 10. Clip Mounting Position for Isolation Test Number 1
Figure 11. Clip Mounting Position for Isolation Test Number 2
Figure 12. Screw Mounting Position for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4-40 SCREW PLAIN WASHER
CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 13. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
Motorola Bipolar Power Transistor Device Data
5
MJF47
PACKAGE DIMENSIONS
-T- F Q A
123
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78
-B-
C S U
H K -Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
CASE 221D-02 TO-220 TYPE ISSUE D
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
Motorola Bipolar Power Transistor Device Data
*MJF47/D*
MJF47/D

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